2N5581

2N5581

SKU: 2N5581
2N5581 Transistor Silicon NPN CASE: TO46 MAKE: Generic
Datasheet
2N5581 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO46
Manufacturer Microsemi
Vbr CBO 75
Vbr CEO 40
Max. PD (W) 2.0
t(f) Max. (S) 60n
Min hFE 20
Ic Max. (A) 800m
@Ic (test) (A) 100u
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 25n
Derate Above 25°C 11m
Trans. Freq (Hz) Min. 250M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772829
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