2N5587

SKU: 2N5587

2N5587 Transistor Silicon NPN CASE: TO114 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO114
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	300
Max. hFE	30
Min hFE	10
Ic Max. (A)	80
@Ic (test) (A)	80
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
R(sat) (Û)	25m
Derate Above 25°C	2.0
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	300 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	80 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	772818

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