2N5601

SKU: 2N5601

2N5601 Transistor Silicon PNP CASE: TO66 MAKE: Generic

Datasheet

2N5601 Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon PNP
Case	TO66
Manufacturer	Savantic
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	20
Derate (Amb) (W/°C)	114m
Max. hFE	200
Min hFE	70
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Trans. Freq (Hz) Min.	60M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	772810

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