2N5606

SKU: 2N5606

2N5606 Transistor Silicon NPN CASE: TO66 MAKE: Generic

Datasheet

2N5606 Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Savantic
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	25
Max. hFE	200
Min hFE	70
Ic Max. (A)	5.0
@Ic (test) (A)	2.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	143m
Trans. Freq (Hz) Min.	70M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	70 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	772807

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