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2N5607
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2N5607

SKU: 2N5607
2N5607 Transistor Silicon PNP CASE: TO66 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 25
Derate (Amb) (W/°C) 143m
Max. hFE 90
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772806
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