2N5610

SKU: 2N5610

2N5610 Transistor Silicon NPN CASE: TO66 MAKE: Solitron Devices

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Solitron Devices
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	25
Max. hFE	200
Min hFE	70
Ic Max. (A)	5.0
@Ic (test) (A)	2.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	143m
Trans. Freq (Hz) Min.	70M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	394445

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