2N5611A

SKU: 2N5611A

2N5611A Transistor Silicon PNP CASE: TO66 MAKE: Generic

Product specifications

Weight	0.05 kg
Equivalent	2N5611
Type	Transistor Silicon PNP
Case	TO66
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	100
Max. PD (W)	25
Derate (Amb) (W/°C)	143m
Max. hFE	90
Min hFE	30
Ic Max. (A)	5.0
@Ic (test) (A)	2.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Trans. Freq (Hz) Min.	60M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	560 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772803

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