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2N5612
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2N5612

SKU: 2N5612
2N5612 Transistor Silicon NPN CASE: TO66 MAKE: Generic
Product specifications
Equivalent 2N5612A
Type Transistor Silicon NPN
Case TO66
Manufacturer Generic
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 25
Max. hFE 90
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 143m
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 560 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772802
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