2N5620

SKU: 2N5620

2N5620 Transistor Silicon NPN CASE: TO3 MAKE: USA Make

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

2N5620 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	USA Make
Vbr CBO	120
Vbr CEO	100
Max. PD (W)	50
Max. hFE	90
Min hFE	30
Ic Max. (A)	5.0
@Ic (test) (A)	2.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	330m
Trans. Freq (Hz) Min.	60M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	313092

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