The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5629
View detailed images (13)

2N5629

SKU: 2N5629
2N5629 Transistor Silicon NPN CASE: TO3 MAKE: Microsemi Corporation
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2N5629 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Microsemi Corporation
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 200
Max. hFE 100
Min hFE 25
Ic Max. (A) 16
@Ic (test) (A) 8.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 1.1
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 84412
Back