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2N563
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2N563

SKU: 2N563
2N563 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 150m
C(ob) (F) 30p-
Derate (Amb) (W/°C) 2.5m
hfe 25-
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 800k-
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 85
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 772799
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