The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5643
View detailed images (12)

2N5643

SKU: 2N5643
2N5643 Transistor Silicon NPN CASE: SOT120 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case SOT120
Manufacturer Advanced Semiconductor
Vbr CBO 65
Vbr CEO 35
Max. PD (W) 60
Min hFE 5.0
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 342m
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 65 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 65 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 115139
Back