2N5666

SKU: 2N5666

2N5666 Transistor Silicon NPN CASE: TO5 MAKE: Motorola Semiconductor

Datasheet

2N5666 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2N5666-SMD
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	Motorola Semiconductor
Vbr CBO	250
Vbr CEO	200
Max. PD (W)	15
t(f) Max. (S)	1.5u+
Max. hFE	120
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Tr Max. (s)	250n
Derate Above 25°C	150m
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	250 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	120 pF
Transition Frequency (ft):	250 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	368604

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