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2N5676
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2N5676

SKU: 2N5676
2N5676 Transistor Silicon PNP CASE: TO66 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer Motorola Semiconductor
Vbr CBO 125
Vbr CEO 100
Max. PD (W) 2.0
Derate (Amb) (W/°C) 160m
Max. hFE 150
Min hFE 50
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 125 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 80 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 368609
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