2N5696

SKU: 2N5696

2N5696 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	140
Vbr CEO	120
Max. PD (W)	120
t(f) Max. (S)	15u
Max. hFE	65
Min hFE	20
Ic Max. (A)	40
@Ic (test) (A)	25
Icbo Max. @Vcb Max. (A)	10m
Polarity	PNP
Tr Max. (s)	20u
Derate Above 25°C	1.4
Oper. Temp (°C) Max.	125
@VCE (V)	2.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	60 A
Max. Operating Junction Temperature (Tj)	110 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	772678

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