The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5703
View detailed images (12)

2N5703

SKU: 2N5703
2N5703 Transistor Silicon NPN CASE: TO218 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Generic
Vbr CBO 36
Vbr CEO 18
Max. PD (W) 10
Min hFE 15
Ic Max. (A) 750m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 57m
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Forward Current Transfer Ratio (hFE), MIN 15
SKU 772672
Back