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2N5706
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2N5706

SKU: 2N5706
2N5706 Transistor Silicon NPN CASE: TO218 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Generic
Vbr CBO 36
Vbr CEO 18
Max. PD (W) 80
Min hFE 15
Ic Max. (A) 7.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity NPN
Derate Above 25°C 460m
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 100 pF
Forward Current Transfer Ratio (hFE), MIN 15
SKU 772669
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