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2N5707
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2N5707

SKU: 2N5707
2N5707 Transistor Silicon NPN CASE: TO218 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Generic
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 70
Max. hFE 50
Min hFE 5.0
Ic Max. (A) 4.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 606145
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