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2N5712
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2N5712

SKU: 2N5712
2N5712 Transistor Silicon NPN CASE: TO218 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 25
Min hFE 10
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
Derate Above 25°C 143m
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 40 pF
Forward Current Transfer Ratio (hFE), MIN 10
SKU 772664
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