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2N5730
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2N5730

SKU: 2N5730
2N5730 Transistor Silicon NPN CASE: TO59 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO59
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 45
t(f) Max. (S) 500n
Max. hFE 300
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 200n
R(sat) (Û) 240m
Derate Above 25°C 300m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772650
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