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2N5739
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2N5739

SKU: 2N5739
2N5739 Transistor Silicon PNP CASE: TO66 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 20
Derate (Amb) (W/°C) 200m
Max. hFE 80
Min hFE 20
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
R(sat) (Û) 500m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 772647
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