2N5760

SKU: 2N5760

2N5760 Transistor Silicon NPN CASE: TO3 MAKE: RF

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	RF
Vbr CBO	140
Vbr CEO	140
Max. PD (W)	150
Max. hFE	60
Min hFE	15
Ic Max. (A)	6.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	333m
Derate Above 25°C	857m
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	300 pF
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	83235

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