The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N580

2N580

SKU: 2N580
2N580 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 120m
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 71
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.12 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772601
Back