2N581

2N581

SKU: 2N581
2N581 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 18
Vbr CEO 15
Max. PD (W) 80m
C(ob) (F) 20p
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity PNP
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 71
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 606148
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