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2N5811
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2N5811

SKU: 2N5811
2N5811 Transistor Silicon PNP CASE: SOT30 MAKE: Microsemi Corporation
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
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Datasheet
2N5811 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT30
Manufacturer Microsemi Corporation
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 500m
C(ob) (F) 15p
Derate (Amb) (W/°C) 4.5m
hfe 60
Ic Max. (A) 750m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 135
@Ic (A) 2.0m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 313111
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