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2N5812
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2N5812

SKU: 2N5812
2N5812 Transistor Silicon NPN CASE: X55-1 MAKE: Generic
Datasheet
2N5812 Datasheet
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Micro Electronics
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 500m
C(ob) (F) 15p
Derate (Amb) (W/°C) 4.5m
hfe 150
Ic Max. (A) 750m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 135
@Ic (A) 2.0m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 135 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 772595
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