2N5816

SKU: 2N5816

2N5816 Transistor Silicon NPN CASE: X55-1 MAKE: Generic

Datasheet

2N5816 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X55-1
Manufacturer	Micro Electronics
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	500m
C(ob) (F)	15p
Derate (Amb) (W/°C)	4.5m
hfe	100
Ic Max. (A)	750m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	135
@Ic (A)	2.0m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.75 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	120 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	368628

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