The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5826
View detailed images (1)

2N5826

SKU: 2N5826
2N5826 Transistor Silicon NPN CASE: X55-1 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Generic
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 360m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 3.6m
hfe 150
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 772590
Back