2N583

SKU: 2N583

2N583 Transistor Germanium PNP CASE: TO1 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	USA Make
Vbr CBO	18
Vbr CEO	15
Max. PD (W)	80m
C(ob) (F)	20p
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	6.0u
Polarity	PNP
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	71
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.12 W
Maximum Collector-Base Voltage \|Vcb\|	18 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	772586

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