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2N5857
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2N5857

SKU: 2N5857
2N5857 Transistor Silicon PNP CASE: TO106 MAKE: Fairchild Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer Fairchild Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 750m
C(ob) (F) 15p
Derate (Amb) (W/°C) 6.8m
hfe 50
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 135
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 606152
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