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2N5860
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2N5860

SKU: 2N5860
2N5860 Transistor Silicon NPN CASE: TO39 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Generic
Vbr CBO 90
Vbr CEO 45
Max. PD (W) 1.0
t(f) Max. (S) 35n
Max. hFE 100
Min hFE 35
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 250n
Polarity NPN
Tr Max. (s) 18n
R(sat) (Û) 700m
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 250M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 772573
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