2N5861

SKU: 2N5861

2N5861 Transistor Silicon NPN CASE: TO105 MAKE: Discrete Semiconductor Industries - DSI

Price:

£4.79 Inc. VAT (£3.99 Ex. VAT)

Qty

Datasheet

2N5861 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO105
Manufacturer	Discrete Semiconductor Industries - DSI
Vbr CBO	100
Vbr CEO	50
Max. PD (W)	1.0
t(f) Max. (S)	35n
Max. hFE	100
Min hFE	25
Ic Max. (A)	2.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	300n
Polarity	NPN
Tr Max. (s)	18n
R(sat) (Û)	1.0
Derate Above 25°C	28m
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	250 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	313122

Back