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2N5862
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2N5862

SKU: 2N5862
2N5862 Transistor Silicon NPN CASE: TO218 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Generic
Vbr CBO 65
Vbr CEO 35
Max. PD (W) 80
Min hFE 5.0
Ic Max. (A) 8.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Derate Above 25°C 533m
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 65 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 130 pF
Forward Current Transfer Ratio (hFE), MIN 5
SKU 772572
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