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2N5865
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2N5865

SKU: 2N5865
2N5865 Transistor Silicon PNP CASE: TO39 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Generic
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 1.2
Derate (Amb) (W/°C) 40m
t(f) Max. (S) 150n
Max. hFE 200
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 200n
Polarity PNP
Tr Max. (s) 90n
R(sat) (Û) 2.5
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.25 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772570
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