The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5886G

2N5886G

SKU: 2N5886G
2N5886G Transistor Silicon NPN CASE: TO3 MAKE: ON Semiconductor
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Equivalent 2N5886
Type Transistor Silicon NPN
Case TO3
Manufacturer ON Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 200
t(f) Max. (S) 800n
Max. hFE 100
Min hFE 20
Ic Max. (A) 25
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 700n
R(sat) (Û) 66m
Derate Above 25°C 1.1
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 390463
Back