2N5887

SKU: 2N5887

2N5887 Transistor Germanium PNP CASE: TO66 MAKE: Generic

Product specifications

Weight	0.05 kg
Type	Transistor Germanium PNP
Case	TO66
Manufacturer	Generic
Vbr CBO	20
Vbr CEO	20
Max. PD (W)	57
Max. hFE	350
Min hFE	15
Ic Max. (A)	7.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
R(sat) (Û)	57m
Derate Above 25°C	670m
Oper. Temp (°C) Max.	125
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	57 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	110 °C
Transition Frequency (ft):	0.25 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	772560

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