2N589
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2N589

SKU: 2N589
2N589 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 7.5
Max. PD (W) 90
Max. hFE 40
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Derate Above 25°C 1.2
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 50 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 772557
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