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2N5896
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2N5896

SKU: 2N5896
2N5896 Transistor Germanium PNP CASE: TO66 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO66
Manufacturer Generic
Vbr CBO 75
Vbr CEO 75
Max. PD (W) 57
Max. hFE 120
Min hFE 60
Ic Max. (A) 7.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
R(sat) (Û) 57m
Derate Above 25°C 670m
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 57 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.25 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 606154
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