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2N5900
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2N5900

SKU: 2N5900
2N5900 Transistor Germanium PNP CASE: TO66 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO66
Manufacturer Motorola Semiconductor
Vbr CBO 75
Vbr CEO 75
Max. PD (W) 57
Max. hFE 200
Min hFE 100
Ic Max. (A) 7.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
R(sat) (Û) 57m
Derate Above 25°C 670m
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 57 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.25 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 772547
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