The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5910

2N5910

SKU: 2N5910
2N5910 Transistor Silicon PNP CASE: TO106 MAKE: Generic
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 9 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2N5910 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer New Jersey Semiconductor
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 310m
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 2.8m
t(f) Max. (S) 10n
hfe 15
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 15n
t(stor) Max. (S) 20n
Trans. Freq (Hz) Min. 700M
@VCE (test) (V) .50
Oper. Temp (°C) Max. 135
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 700 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 85669
Back