The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5927
View detailed images (1)

2N5927

SKU: 2N5927
2N5927 Transistor Silicon NPN CASE: TO114 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO114
Manufacturer Generic
Vbr CBO 150
Vbr CEO 120
Max. PD (W) 200
t(f) Max. (S) 6.0u
Max. hFE 40
Min hFE 10
Ic Max. (A) 100
@Ic (test) (A) 70
Polarity NPN
Tr Max. (s) 6.0u
Derate Above 25°C 2.0
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 772532
Back