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2N5929
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2N5929

SKU: 2N5929
2N5929 Transistor Silicon NPN CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer USA Make
Vbr CBO 90
Vbr CEO 80
Max. PD (W) 100
t(f) Max. (S) 300m
Max. hFE 100
Min hFE 20
Ic Max. (A) 30
@Ic (test) (A) 10
Polarity NPN
Tr Max. (s) 500n
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 772530
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