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2N5930
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2N5930

SKU: 2N5930
2N5930 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Datasheet
2N5930 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer SemeLAB
Vbr CBO 130
Vbr CEO 120
Max. PD (W) 100
t(f) Max. (S) 300n
Max. hFE 100
Min hFE 20
Ic Max. (A) 30
@Ic (test) (A) 10
Polarity NPN
Tr Max. (s) 500n
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 772528
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