2N5966

SKU: 2N5966

2N5966 Transistor Silicon NPN CASE: TO61 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	USA Make
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	125
t(f) Max. (S)	1.5u+
Max. hFE	120
Min hFE	25
Ic Max. (A)	30
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Tr Max. (s)	1.1u
R(sat) (Û)	80m
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	550 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772509

Back