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2N5969
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2N5969

SKU: 2N5969
2N5969 Transistor Silicon PNP CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO61
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 125
Derate (Amb) (W/°C) 1.2
t(f) Max. (S) 1.5u+
Max. hFE 120
Min hFE 25
Ic Max. (A) 30
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
Tr Max. (s) 1.1u
R(sat) (Û) 80m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 875 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368644
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