2N5975

2N5975

SKU: 2N5975
2N5975 Transistor Silicon PNP CASE: TO127 MAKE: Motorola Semiconductor
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Product specifications
Type Transistor Silicon PNP
Case TO127
Manufacturer Motorola Semiconductor
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 75
Derate (Amb) (W/°C) 600m
Max. hFE 120
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 553116
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