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2N6000
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2N6000

SKU: 2N6000
2N6000 Transistor Silicon NPN CASE: TO98-1 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO98-1
Manufacturer Generic
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 500m
C(ob) (F) 6.0p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 3.3m
t(f) Max. (S) 70n
hfe 70
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 15n
t(stor) Max. (S) 250n
Trans. Freq (Hz) Min. 350M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 606157
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