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2N6001
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2N6001

SKU: 2N6001
2N6001 Transistor Silicon PNP CASE: TO98-1 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO98-1
Manufacturer Generic
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 400m
t(on) Delay (S) 6.0n
Derate (Amb) (W/°C) 4.0m
t(f) Max. (S) 60n
hfe 85
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 17n
t(stor) Max. (S) 170n
Trans. Freq (Hz) Min. 700M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 225 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 772503
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