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2N6010
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2N6010

SKU: 2N6010
2N6010 Transistor Silicon NPN CASE: X55-1 MAKE: Generic
Datasheet
2N6010 Datasheet
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Semiconductor Technology
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 500m
C(ob) (F) 10p
t(on) Delay (S) 12n
Derate (Amb) (W/°C) 4.0m
t(f) Max. (S) 100n
hfe 65
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 25n
t(stor) Max. (S) 300n
Trans. Freq (Hz) Min. 330M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 240 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 772493
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