2N6012

SKU: 2N6012

2N6012 Transistor Silicon NPN CASE: X55-1 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X55-1
Manufacturer	Generic
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	500m
C(ob) (F)	10p
t(on) Delay (S)	12n
Derate (Amb) (W/°C)	4.0m
t(f) Max. (S)	150n
hfe	155
Ic Max. (A)	800m
Icbo Max. @Vcb Max. (A)	10n
Polarity	NPN
Tr Max. (s)	25n
t(stor) Max. (S)	350n
Trans. Freq (Hz) Min.	420M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.8 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	240 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	772492

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